Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: TVSdiodeDescription: Rectifier Diode, 1 Phase, 1Element, 75A, 1200V V(RRM), Silicon, 7.50 X 7.5MM, DIE-199255+$35.013450+$33.5171200+$32.6792500+$32.46971000+$32.26022500+$32.02085000+$31.87127500+$31.7216 -
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Category: TVSdiodeDescription: Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.75291+$61.742410+$59.0579100+$58.5747250+$58.1989500+$57.60831000+$57.33992500+$56.96405000+$56.6419 -
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Category: TVSdiodeDescription: Rectifier Diode, 1 Phase, 1Element, 50A, 1200V V(RRM), Silicon, 6.50 X 6.5MM, DIE-116855+$26.766150+$25.6222200+$24.9817500+$24.82151000+$24.66142500+$24.47845000+$24.36407500+$24.2496 -
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Category: TVSdiodeDescription: Rectifier Diode, 1 Phase, 1Element, 75A, 1700V V(RRM), Silicon, 6.80 X 6.8MM, DIE-148101+$38.486110+$36.2779100+$34.6375250+$34.3851500+$34.13281000+$33.84892500+$33.59655000+$33.4388 -
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Category: TVSdiodeDescription: Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.91191+$60.770610+$57.2838100+$54.6936250+$54.2951500+$53.89661000+$53.44832500+$53.04985000+$52.8007
